Silicon-based Molecular Electronics:
Caption: (a) Schematic of a scanning tunneling microscope tip addressing individual TEMPO molecules on the Si(100) surface. This experimental approach is used to characterize prototype silicon-based molecular resonant tunneling diodes at the single molecule level. (b) Ultra-high vacuum scanning tunneling microscopy image of one-dimensional styrene chains on the Si(100)-2x1:H surface. The apparent width of the chains is approximately 1 nm.
Relevant Publications:
[1] R. Basu, N. P. Guisinger, M. E. Greene, and M. C. Hersam, “Room temperature nanofabrication of atomically registered heteromolecular organosilicon nanostructures using multi-step feedback controlled lithography,” Appl. Phys. Lett., 85, 2619 (2004).
[2] N. P. Guisinger, R. Basu, M. E. Greene, A. S. Baluch, and M. C. Hersam, “Observed suppression of room temperature negative differential resistance through organic monolayers on Si(100),” Nanotechnology, 15, S452 (2004).
[3] M. C. Hersam and R. Reifenberger, “Charge transport through molecular junctions,” MRS Bull., 29, 385 (2004).
[4] N. P. Guisinger, M. E. Greene, R. Basu, A. S. Baluch, and M. C. Hersam, “Room temperature negative differential resistance through individual molecules on silicon surfaces,” Nano Letters, 4, 55 (2004).
[5] N. P. Guisinger, R. Basu, A. S. Baluch, and M. C. Hersam, “Molecular electronics on silicon: An ultra-high vacuum scanning tunneling microscopy study,” Ann. N. Y. Acad. Sci., 1006, 227 (2003).
Collaborators: Supriyo Datta (Purdue ECE), Mark Ratner (NU Chemistry)